- Semiconductors & Devices
FOR IMMEDIATE RELEASE No. 3593
X-Series HVIGBT module HV100 dual-type
TOKYO, April 25, 2023 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The dual-type module, which achieves 4.5kV withstand voltage and 10.2kVrms dielectric strength, is rated at 450A, which is believed to be unmatched among 4.5kV silicon HVIGBT modules.1 The product will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2023 in Nuremberg, Germany from May 9 to 11.
Power semiconductors are increasingly being utilized to efficiently convert electric power in order to lower the carbon footprint of global society, particularly in heavy industry, where these devices are used in power-conversion equipment such as inverters in railway traction systems and for DC power transmission. In response to the growing demand for devices offering high output, high efficiency and wide ranging output capacity, Mitsubishi Electric released two versions (3.3kV/450A and 3.3kV/600A) of its HV100 dual-type X-Series high-dielectric-strength HVIGBT module in 2021. In the near future, the forthcoming HV100 dual-type X-Series module will contribute to even higher output, higher efficiency and improved system reliability for inverters used in large industrial equipment requiring high dielectric strength.
- 1Compared to Si IGBT modules with dual-type HV100 packages achieving 4.5kV withstand voltage and 10.2kVrms insulation voltage, according to Mitsubishi Electric's own research as of April 25, 2023
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