• Semiconductors & Devices

FOR IMMEDIATE RELEASE No. 3786

XB Series HVIGBT Module (3.3kV/1500A Type)

XB Series HVIGBT Module (3.3kV/1500A Type)

TOKYO, April 8, 2025 April 11, 2025 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) module, a 3.3k-volt, 1500A high-capacity power semiconductor for large industrial equipment such as railway vehicles, on May 1. By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements, as well as a unique chip termination structure, the module's improved moisture resistance will help to improve the efficiency and reliability of inverters for large industrial equipment operating in diverse environments. Mitsubishi Electric will exhibit the XB Series HVIGBT module at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8.

The new 3.3kV/1500A XB Series HVIGBT module uses IGBT elements incorporating Mitsubishi Electric's proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT1) structure. In particular, the module reduces total switching loss by approximately 15%2 compared to previous models, contributing to higher efficiency in inverters. It also expands tolerance in the reverse-recovery safe-operating area (RRSOA) by about 25%3 compared to previous models, further enhancing inverter reliability. In addition, by using a new electric field relaxation structure4 and a surface charge control structure5 in the chip's termination area, Mitsubishi Electric has reduced the area's size by about 30% while achieving about 20 times6 greater moisture resistance than existing products, contributing to more stable operation of inverters used in high-humidity environments. By further improving the efficiency and reliability of inverters for large industrial equipment operating in various environments, the module is expected to contribute to efforts to achieve carbon neutrality.


  1. 1Proprietary IGBT structure utilizing the carrier storage effect.
  2. 2Comparison of the existing CM1500HC-66R and the new product in terms of Eon + Eoff + Erec at Tj=150°C, VCC=1800V, and IC=1500A.
  3. 3Comparison of the existing CM1500HC-66R and the new product in terms of Prr, which is the product of VCE.and Irr in the RRSOA.
  4. 4Proprietary structure with optimally arranged p-type semiconductor regions that gradually widen the spacing.
  5. 5Proprietary structure where the semi-insulating film is in direct contact with the semiconductor region, ensuring stable charge dissipation.
  6. 6Results of the condensation resistance verification test for XB Series and existing H-Series products with a voltage rating of 3.3kV and a current rating of 1200A.

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