• Semiconductors & Devices

FOR IMMEDIATE RELEASE No. 3397

TOKYO, February 18, 2021 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two products, one for multi-carrier1 communication and the other for single-carrier2 communication, will support increased data-transmission capacity and smaller earth stations. Sales will begin on March 15.

  1. 1Voice, video and data communication method that uses carrier signals of various frequencies
  2. 2Communication method that uses a single-frequency carrier signal
GaN HEMTs for Ku-band SATCOM earth stations Single-carrier 30W MGFK45G3745 (l

GaN HEMTs for Ku-band SATCOM earth stations
Single-carrier 30W MGFK45G3745 (left) and multi-carrier 30W MGFK45G3745A (right)

Ku-band satellite systems are increasingly being deployed for emergency communication during natural disasters and for satellite news gathering (SNG) by TV broadcasters in remote areas where cable networks do not exist. Meanwhile, in addition to the growing use of conventional single-carrier communication, multi-carrier communication is increasingly needed for fast, high-volume communication and to support the downsizing of mobile stations for purposes such as SNG. So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 30W GaN HEMTs will enable more flexible amplifier designs, including for rated power levels and the use of GaN drivers. They also will support the downsizing of earth stations as well as faster, larger-capacity satellite communication.

Sales Schedule

Product Application Model Overview Release
Frequency Saturated
output
power		 Application
Ku-band
GaN-
HEMTs		 SATCOM
earth stations		 MGFK45G3745A 13.75-14.5
GHz		 45.3dBm
(30W)		 Multi-carrier Mar. 15, 2021
MGFK45G3745 45.3dBm
(30W)		 Single-carrier

Product Features

  1. 1)Low IMD3 with wide offset frequencies of up to 400MHz for large-capacity SATCOM

    The MGFK45G3745A for multi-carrier communications delivers low IMD33 with wide offset frequencies4 of up to 400MHz for large-capacity, high-speed satellite communication.

    1. 3Frequency difference between two-tone signals, used in IMD3 measurements.
    2. 4Third-order intermodulation distortion, a measure of amplifier distortion in the case of two-tone signals.

  2. 2)Expanded GaN HEMT lineup will enable smaller SATCOM earth stations

    Multi-carrier communication (new model in bold)

    Model MGFK45G3745A MGFK48G3745A MGFK50G3745A
    Frequency 13.75GHz-14.5GHz
    Saturated
    output power    		 45.3dBm
    (30W)    		 48.3dBm
    (70W)    		 50.0dBm
    (100W)
    Linear gain 9.5dB 11dB 10dB
    Offset frequency
    @IMD3 = -25dBc    		 Up to 400MHz Up to 400MHz Up to 200MHz

    Single-carrier communication (new model in bold)

    Model MGFK45G3745 MGFK48G3745 MGFK50G3745 MGFG5H1503
    Frequency 13.75GHz-14.5GHz
    Saturated
    output power    		 45.3dBm
    (30W)    		 48.3dBm
    (70W)    		 50.0dBm
    (100W)    		 43.0dBm
    (20W)
    Linear gain 9.5dB 12dB 10dB 24dB
    Offset frequency
    @IMD3 = -25dBc    		 Up to 5MHz Up to 5MHz Up to 5MHz Up to 5MHz

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