• Semiconductors & Devices

FOR IMMEDIATE RELEASE No. 3372

TOKYO, September 15, 2020 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.

  1. 1Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
  • 1200V/600A, 800A 2 in 1 1700V/300A 2 in 1, chopper RTC circuit embedded

    1200V/600A, 800A 2 in 1 1700V/300A 2 in 1, chopper RTC circuit embedded

  • 1200V/300A, 400A 4 in 1 RTC circuit embedded

    1200V/300A, 400A 4 in 1 RTC circuit embedded

  • 1200V/1200A 2 in 1 RTC circuit embedded

    1200V/1200A 2 in 1 RTC circuit embedded

  • 1200V/400A 4 in 1 1200V/800A 2 in 1

    1200V/400A 4 in 1 1200V/800A 2 in 1

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  • 1200V/600A, 800A 2 in 1 1700V/300A 2 in 1, chopper RTC circuit embedded
  • 1200V/300A, 400A 4 in 1 RTC circuit embedded
  • 1200V/1200A 2 in 1 RTC circuit embedded
  • 1200V/400A 4 in 1 1200V/800A 2 in 1

Product Features

  1. 1)Will facilitate more power-efficient, smaller and lighter industrial equipment
    • Junction field-effect transistor (JFET) doping technology2 reduces on-resistance by about 15% compared to that of conventional SiC products3.
    • Reducing mirror capacitance4 enables fast switching and reduces switching loss.
    • Built-in SiC-MOSFET and SiC-SBD help to reduce power loss by approximately 70% compared to that of Mitsubishi Electric's conventional Si-IGBT modules.
    • Power loss reduction and high carrier frequency operation will facilitate development of smaller and lighter external components, such as reactors and coolers.
    1. 2Increases device density by increasing impurity density in JFET area
    2. 3Mitsubishi Electric's first-generation SiC modules (with same rating) for industrial use
    3. 44 Stray capacitance between gate and drain existing in MOSFET structure (Crss) that affects switching time
  2. 2)Real time control (RTC) circuit balances short-circuit performance and low on-resistance
    • Safe short-circuit performance and low on-resistance characteristics achieved with RTC circuit5 to block excessive current during short circuits.
    • In the event of a short circuit, safely blocks excessive current from an external protection circuit by monitoring short-circuit detection signal.
    1. 5Except FMF400BX-24B and FMF800DX-24B models
  3. 3)Optimized internal chip layout for improved heat dissipation
    • Decentralized and optimized placement of SiC-MOSFET and SiC-SBD chips inside modules help to improve heat dissipation, thereby allowing the use of smaller, or fanless, coolers.

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