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FOR IMMEDIATE RELEASE No. 3363

TOKYO, July 14, 2020 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today they have developed a new technology to realize a gallium nitride (GaN) power amplifier module for 5G base-stations that offers a combination of compact (6mm by 10mm) footprint and extra-high power-efficiency1, the latter exceeding an unprecedented rating of 43%2. The module, which uses a minimum number of chip components in the matching circuit to control high-quality signal output, is expected to help realize 5G base-stations that are widely deployable and highly power efficient. Technical details of the new module will be presented at the IEEE International Microwave Symposium this coming August.

  1. 1According to Mitsubishi Electric research as of July 14, 2020
  2. 2Using the 5G frequency range of 3.4-3.8GHz

Key Features

  1. 1)High-density mounting technology to realize compact (6mmx10mm) power amplifier module for more widely deployable 5G base-stations
    • In 4G base-stations, which do not use massive Multiple-Input and Multiple-Output (mMIMO) antennas, power amplifiers use metal-foil transmission lines for the matching circuit. While this lowers power loss, resulting in high-efficiency operation, transmission lines take up space and make it difficult to realize base stations that are both extra small and extra power efficient. Mitsubishi Electric's new technology eliminates the need for transmission lines in 5G power amplifiers.
    • The new amplifier module's matching circuit is integrated with surface mount devices (SMDs), such as capacitors and inductors. By introducing a highly accurate electromagnetic field analysis method and applying a unique technology for the dense arrangement of SMDs, Mitsubishi Electric was able to reduce the amplifier's size to just one-ninetieth that of conventional power amplifiers.3
    1. 3Mitsubishi Electric's 4G power amplifiers released on January 12, 2017
  2. 2)World's highest power efficiency reduces 5G base-station's power consumption
    • High-efficiency GaN transistors help to increase the efficiency of the power amplifier.
    • Using SMDs for the matching circuit can reduce the amplifier's size but also can decrease power efficiency because SMDs tend to have high power loss. Mitsubishi Electric's new technology, however, creates a matching circuit using a small number of SMDs. Furthermore, the SMDs offer the same electrical characteristics as those of metal-foil transmission lines. The resulting power amplifier module achieves a world-leading power efficiency rating of more than 43% in the 3.4-3.8GHz bands used for 5G communications.

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