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Expanding our SiC power semiconductor device business to achieve GX
The power semiconductor device plays a crucial role in our challenge to achieve GX (green transformation) with a view to a future where carbon neutrality and social change are possible.
SiC power semiconductor devices—which are made from compound semiconductor SiC (silicon carbide) that binds silicon (Si) and carbon (C) at a 1:1 ratio—offer significantly reduced power loss compared to conventional silicon-based power semiconductor devices while enabling high-temperature operation and high-speed switching. As such, SiC power semiconductor devices are anticipated to contribute to energy-saving in a diversity of power electronics devices, including home appliances such as air conditioners, industrial devices, train carriages, and cars. Therefore, rapid market expansion is predicted as SiC power semiconductor devices are adopted in electric vehicles.
Furthermore, a power semiconductor device utilizing gallium oxide (Ga2O3) is highly anticipated as a next-generation semiconductor wafer material.
In our challenge to achieve GX, Mitsubishi Electric will aim to expand our power semiconductor device business through various investments as well as R&D and commercialization of cutting-edge power semiconductor devices.
News : March 14,2023
Construct New Wafer Plant to Boost SiC Power Semiconductor Business
Mitsubishi Electric will double its previously announced investment plan to approx. 260 billion yen in the five-year period to March 2026 mainly for constructing a new wafer plant to increase production of silicon carbide (SiC) power semiconductors. A major portion of the increased investment, approximately 100 billion yen, will be used to construct a new 8-inch SiC wafer plant and enhance related production facilities. The new factory, which will incorporate an owned facility in the Shisui area of Kumamoto Prefecture, will produce large-diameter 8-inch SiC wafers, introduce a clean room featuring state-of-the-art energy efficiency and high-level automated production efficiency.
NEWS : October 10, 2023
Invest in Coherent's New SiC Business
Mitsubishi Electric has agreed with Coherent Corp. to invest USD 500 million (approx. 75 billion yen*) in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power semiconductor device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.
By further deepening its collaboration with Coherent through this investment, Mitsubishi Electric aims to stabilize its procurement of SiC substrates for SiC power semiconductor devices, for which demand is forecasted to grow rapidly, and thereby expand its supply of reliable high-performance SiC power semiconductor devices to meet rising global demand.
NEWS : May 26, 2023
Mitsubishi Electric and Coherent Enter into A Collaboration to Scale Manufacturing of SiC Power Electronics on A 200 mm Technology
Mitsubishi Electric Corporate and Coherent Corp. have signed a memorandum of understanding (MOU) to collaborate on a program to scale manufacturing of SiC power electronics on a 200 mm technology platform. Under the MOU, Coherent will develop a supply of 200 mm n-type 4H SiC substrates for Mitsubishi Electric’s future SiC power devices manufactured at the new facility.
NEWS : Nov. 13, 2023
Mitsubishi Electric and Nexperia to Partner in Joint SiC Power Semiconductors Development
Mitsubishi Electric will enter into a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips that Nexperia will use to develop SiC discrete devices.
NEWS : July 28, 2023
Mitsubishi Electric Buys Stake in Novel Crystal Technology to Accelerate Development of Gallium-oxide Power Semiconductors
Mitsubishi Electric has taken an equity position in Novel Crystal Technology, Inc., a Japanese company that develops and sells gallium-oxide wafers, a promising candidate for use in superior energy-saving power semiconductors that Mitsubishi Electric intends to develop at an accelerated pace in support of global decarbonization.
Mitsubishi Electric now expects to accelerate its development of superior energy-saving gallium-oxide power semiconductors by combining its own expertise in the design and manufacture of low-energy-loss, high reliability power semiconductors with Novel Crystal Technology's expertise in the production of gallium-oxide wafers.
NEWS : August 29, 2023
Completes Installation of 12-inch Wafer Processing Line at its Fukuyama Factory Power Device Works
Mitsubishi Electric has completed installation of its first 12-inch silicon wafer processing line at its Power Device Work's Fukuyama Factory, which manufactures power semiconductors. In addition, through sample production and testing, it has been verified that the power semiconductor chips processed on this production line achieve the required performance levels.
Mitsubishi Electric is planning to start mass production on the new 12-inch silicon wafer line in fiscal 2025. The company aims to approximately double its silicon power semiconductor wafer processing capacity by fiscal 2026 compared to fiscal 2021 levels.
