T series equipped with seventh generation IGBT
Insulated gate bipolar transistor (IGBT) modules, which are indispensable devices for inverters in all kinds of industrial equipment, have been improved with higher current and higher withstand voltage since their commercialization in 1990. In addition, Mitsubishi Electric has responded to the need for lower loss and downsizing of industrial equipment by moving from a flat planar chip structure to a trench gate structure, and by using CSTBT™ (Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect). The T/T1 series is smaller and has lower power dissipation than the conventional S series (6th generation IGBTs). Furthermore, the NX and LV100 types have been added to the standard (std) type of conventional external shape.
Features
Applications
Low inductance structure
Lineup
IC (A) | Connection | Type name | ||
---|---|---|---|---|
VCES=1200V | VCES=1700V | VCES=2000V | ||
800 | - | |||
1200 | ||||
Package |
Documents
Corresponding Products