MITSUBISHI ELECTRIC Power devices: Bare Die

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Bare Die

SiC-MOSFET

Planar and trench type SiC MOSFET technology contribute to low power loss and high reliability.

Features

SiC-MOSFETs enable lower loss and higher frequency operation than conventional Si-IGBTs, contributing to system miniaturization.
By forming a high-quality gate oxide film in the trench structure, Vth drift and power loss degradation are suppressed during long-term use.
In addition to the Bottom P-Well structure that protects the gate oxide film, Mitsubishi original structure (SPW^*1, J-FET doping^*2) realizes high gate reliability, low Ron, and low switching loss.

*1：Side P-Well in Trench Devices
*2：Technology to increase the impurity concentration in the JFET (Junction Field Effect Transistor) region and increase the density of the device.

Applications