GaN High-Frequency Devices

GaN enables high efficiency and high output, thereby contributing to the evolution of high-speed, large-capacity communication systems such as satellite communication (SATCOM) Earth station, and mobile communication base transceiver station (BTS).

Features

High efficiency, high output, abundant product lineup, large capacity for information transmission, miniaturization of communication equipment, low power consumption, etc.

Selection Map

Click the model name for details (You can enlarge it for viewing)

★: New product  ★★: Under development
Partially supported by Japan's New Energy and Industrial Technology Development Organization(NEDO).

HEMT:High Electron Mobility Transistor

GaN HEMT for Mobile Communication Base Transceiver Station (BTS)

16W GaN Power Amplifier Module for 5G Massive MIMO Base Stations MGFS52G38MB

  • Reduces number of power amplifier modules and extends range of 5G mMIMO base stations
  • High efficiency of 40% (Typ.) in 500MHz band reduces 5G mMIMO base station power consumption
  • Modularization reduces circuit-design burden and manufacturing cost of 5G mMIMO base stations

8W GaN Power Amplifier Module for 5G Massive MIMO Base Stations
MGFS48G38MB

Features

  • Higher power-added efficiency of more than 43% in the 400MHz band reduces power consumption of 5G massive MIMO* base stations
  • Modularization of power amplifiers reduces the circuit design burden and manufacturing cost of 5G massive MIMO base stations
  • *MIMO:Multiple Input Multiple Output
Base Transceiver Station (BTS)

Product Lineup

GaN HEMT & MMIC for satellite communication (SATCOM) earth station

Lead to products line-up for various needs of the satellite communication (SATCOM) earth station

GaN MMIC Power Amplifier for Ka-band SATCOM Earth Stations
MGFGC5H3102 / MGFGC5H3103

  • Expanded GaN HEMT lineup will support proliferation of SNG (satellite news gathering) and SATCOM emergency systems in addition to the usual SATCOM proliferation
  • Industry's smallest bare chip class* will help downsize SATCOM earth stations
  • Additional power efficiency of 20% will reduce power consumption in SATCOM earth stations
  • *According to Mitsubishi Electric research as of June 14, 2024

Multi-carrier communications Ku-band GaN-HEMTs

Features

  • New lineup of 70W output power products (MGFK48G2732A) that can operate in the Low-Ku band (13GHz)
  • Wide offset frequency up to 400MHz
    (MGFK48G2732A/MGFK45G3745A/MGFK48G3745A) for large-capacity satellite communications
  • 30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations
Multi-carrier communications Ku-band GaN-HEMTs

Single-carrier communications Ku-band GaN-HEMTs・MMIC

Features

  • New lineup of 30W output power products (MGFK45G2732) that can operate in the Low-Ku band (13GHz)
  • 20W/30W/70W/100W of output power products lineup will meet customers diverse needs and available downsizing of SATCOM earth stations
  • Built-in linearizer (MGFG5H1503) enables low distortion in power transmitters
  • *According to Mitsubishi Electric as of September, 2016
Single-carrier communications Ku-band GaN-HEMTs・MMIC

Product Lineup

  • Multi / Single -carrier communications Ku-band GaN-HEMTs

Example of the configuration of the power amplifier by the Ku-band GaN HEMT product line-up

Output
power
Multi-carrier communications Single-carrier communications
30W MGFK45G3745A MGFK45G3745
70W MGFK45G3745A,MGFK48G3745A MGFK45G3745*,MGFK48G3745 *MGF5H1503 also usable
100W MGFK45G3745A,MGFK50G3745A MGFK45G3745,MGFK50G3745
120W MGFK45G3745A,MGFK48G3745A,MGFK48G3745A MGFK45G3745,MGFK48G3745,MGFK48G3745

Notes

  • ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.