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FOR IMMEDIATE RELEASE No. 2918
Mitsubishi Electric to Release Sample 3.5GHz-band GaN-HEMT for 4G Mobile-communication Base Transceiver Stations
For BTS covering area expansion, small size and low power consumption by high performance
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TOKYO, March 11, 2015- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering top-level* output power and efficiency for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band for fourth generation (4G) mobile communication. Samples will be released starting April 1.
| * | Researched on March 11, 2015 by Mitsubishi Electric |
MGFS50G38FT1 (left) , MGFS39G38L2 (right)
As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for BTS that can offer increased data volume, smaller size and lower power consumption. In response, Mitsubishi Electric has developed and will begin shipping samples of a world-leading class of high-output, high-efficiency GaN-HEMT for macro- and micro-cell BTS.
Product Features
| 1) | World-leading power output of 100W for macro-cell BTS
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| 2) | High efficiency by adopting GaN-HEMT and transistor optimization
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