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FOR IMMEDIATE RELEASE No. 2918

Mitsubishi Electric to Release Sample 3.5GHz-band GaN-HEMT for 4G Mobile-communication Base Transceiver Stations

For BTS covering area expansion, small size and low power consumption by high performance

TOKYO, March 11, 2015- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering top-level* output power and efficiency for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band for fourth generation (4G) mobile communication. Samples will be released starting April 1.

* Researched on March 11, 2015 by Mitsubishi Electric
GaN-HEMT for 3.5GHz-band 4G mobile communication BTS use MGFS50G38FT1 (left) , M
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GaN-HEMT for 3.5GHz-band 4G mobile communication BTS use
MGFS50G38FT1 (left) , MGFS39G38L2 (right)
As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for BTS that can offer increased data volume, smaller size and lower power consumption. In response, Mitsubishi Electric has developed and will begin shipping samples of a world-leading class of high-output, high-efficiency GaN-HEMT for macro- and micro-cell BTS.

Product Features
1) World-leading power output of 100W for macro-cell BTS
-High-output power realized through transistor optimization.
-Helps to expand BTS coverage range.
2) High efficiency by adopting GaN-HEMT and transistor optimization
-High efficiency helps to reduce BTS size and power consumption.
-100W device for macro-cell BTS realizes high drain efficiency** of 74%.
-9W device for micro-cell BTS realizes high drain efficiency** of 67%.
-High efficiency allows a simpler cooling system, contributing to reduced size and power consumption.
** Load pull measurement

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