In the power device market, which demands high-speed switching voltage drive and low loss, MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has proven performance in low current, low withstand voltage fields. By utilizing a trench gate structure based on submicron technology, MOSFET has significantly improved low ON resistance (resistance in the region where drain current flows between drain and source) compared to planar type.
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ID (A) | Connection | Type name | ||
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VDSS=75V | VDSS=100V | VDSS=150V | ||
100 | ||||
200 | ||||
300 | ||||
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