Discrete
SiC-MOSFET / SiC-SBD
Our SiC-MOSFETs and SiC-SBDs will contribute to lower power consumption and downsizing of the power supply system.
Features
- <<SiC-MOSFET>> Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving power loss reduction by approx. 80% *1 compared to the conventional silicon (Si) products.
- <<SiC-SBD>> JBS structure allows high forward surge capability and contributes to improving reliability
- ※1：Conventional silicon (Si) product: Mitsubishi Electric 1200V IGBT module
Applications
- Air-conditioner
- Photovoltaic
- xEV charging infrastructure
- On board charger
- Switching-mode power supply
Lineup
SiC-MOSFET
| Grade | Package | VDS(V) | RDSon(mΩ) | ID(A) | Name | Datasheet | SPICE Model (LTspice)* |
|---|---|---|---|---|---|---|---|
| Industrial | TO-247-4 | 1200 | 80 | 36 | BM080N120K *1 | ||
| 40 | 66 | BM040N120K *1 | |||||
| 22 | 107 | BM022N120K *1 | |||||
| Automotive | TO-247-4 | 1200 | 80 | 36 | BM080N120KJ *1 | ||
| 40 | 66 | BM040N120KJ *1 | |||||
| 22 | 107 | BM022N120KJ *1 |
SiC-SBD
| Grade | Package | VDS(V) | ID(A) | Name |
|---|---|---|---|---|
| Industrial | TO-247-4 | 600 | 20 | BD20060T |
| BD20060A |
* 1: Discontinuation of development
* Please be sure to read the disclaimer in the download file before using the contents.
LTspice is a registered trademark of Analog Devices, Inc.
LTspice is a registered trademark of Analog Devices, Inc.