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Mitsubishi Silicon RF devices support wireless communication networks.
Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
NEW PRODUCTS
Silicon RF High-power MOSFET for Commercial Handheld Two-way Radio RD06LUS2
- ■Achieves industry-leading* 6.5W output power by 3.6V operation for extended radio range.
- ■Optimization for 3.6V operation achieves industry-leading* 65% drain efficiency, resulting in extended operating time for commercial handheld two-way radio.
- ■New package with two MOSFET chips reduces footprint by 33% compared and assembly costs.
- ※As of February 27, 2024 according to Mitsubishi Electric’s research of power amplifiers in the 3.6V operation.
3.6V/7.2V/12.5V Operation RF High Power MOS FET (Discrete)
Selection Map
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7.2V/9.6V/12.5V Operation RF High Power MOS FET Module
Selection Map
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Notes
- ■ADS/MWO Non-linear models, Reliability data are available for most of our devices. Please contact sales representative.