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FOR IMMEDIATE RELEASE No. 3053

Mitsubishi Electric to Expand Lineup of Ku-band GaN-HEMTs

High output power of new models will help reduce size of satellite earth stations

TOKYO, September 27, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will expand its lineup of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) to include units with 100W and 70W output power for use in satellite earth stations utilizing the Ku-band*. The new 100W GaN-HEMT offers output power that is among the highest currently available, according to Mitsubishi Electric's own research as of September 27. Mitsubishi Electric will begin shipping samples on October 1.
* Microwave band ranging from 12-18GHz
Left: MGFK50G3745Right: MGFK48G3745

Left: MGFK50G3745
Right: MGFK48G3745

The demand for satellite communication is increasing, especially in Ku-band, which enables high-speed communication even under adverse conditions, such as natural disasters, and in areas where construction of communication facilities is difficult. The deployment of transmitter equipment using higher-power GaN-HEMTs has become more common in recent years, particularly in high-speed applications such as satellite news gathering.

Mitsubishi Electric is expanding its Ku-band GaN-HEMT lineup to meet this growing demand for higher output power levels with the introduction of its MGFK50G3745 model, boasting an industry-leading output power of 100W, and the 70W output power MGFK48G3745 model.

Product Features
1) Industry-leading output power contributes to miniaturization
-Transistor structure optimization, with the MGFK50G3745 model delivering an output of 100W, ideal for satellite earth stations utilizing the Ku-band
-GaN-HEMTs with fewer parts, thereby contributing to the miniaturization of transmitter equipment in satellite earth stations
2) Expands product line-up and meets diverse needs
-New 100W and 70W models, addressing the need for more diverse output power ratings of transmitter equipment for satellite earth stations
-Individual transmitter components can be configured independently during manufacture, eliminating the need for on-site configuration and shortening overall development times
-Utilizes the existing MGFG5H1503 power amplifier as a driver stage, leveraging the latter's linearizer device to help reduce distortion in power transmitters
Sale Schedule
Product Application Model Overview Shipment
Frequency Saturated
output
power
Linear
gain
Ku-band
GaN-
HEMTs
Satellite earth
stations
MGFK50G3745 13.75-14.5
GHz
50.0dBm
(100W)
10.0dB Jan. 1, 2017
MGFK48G3745 48.3dBm
(70W)
10.0dB Oct. 1, 2016

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