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High-power modules are key for power systems that require large capacity, high reliability and superb efficiency. Mitsubishi Electric commercialized its first HVIGBT module in 1997, which contributed to the increased capacity and miniaturization of high voltage converter systems. To achieve higher output current and reliable design, Mitsubishi Electric has developed the X-Series HVIGBT module with seventh-generation Insulated Gate Bipolar Transistor (IGBT) and Relaxed Field of Cathode (RFC) diode.

Product Features

1)	Industry-leading 6.5kV / 1000A power for increased capacity - Higher output current at the same size as previous modules - Seventh-generation CSTBT*TM chip and RFC diode chip reduce power loss by about 20 percent and thermal resistance by 10 percent compared to existing HVIGBT module (CM750HG-130R) * Mitsubishi Electric's original IGBT chip construction incorporating carrier-store effect
2)	Expanded operating temperature range for smaller systems - Maximum operation temperature of 150 degrees Celsius, a world's first for the 6.5kV class - Seventh-generation CSTBT chip and RFC diode chip, and improved package technology enable smaller inverter systems with broad SOA
3)	Compatible package for simplified design and easy replacement - Enable for use the inverter system to reduce development term - Outline and terminal layout compatible with existing HVIGBT module (CM600HG-130H, CM750HG-130R )

Sales Schedule

Model	Specification	Shipment
CM1000HG-130XA	6.5kV / 1000A 1in1, IGBT module	November 30, 2015