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Sales of hybrid and electric vehicles are expanding in line with growing awareness of environmental issues. Automotive components must meet especially stringent safety standards, which creates demands for power semiconductor modules that provide greater reliability than modules for industrial equipment. Mitsubishi Electric pioneered the mass production of power semiconductor modules for hybrid vehicles in 1997.

The sample to be released this time is a compact power semiconductor module, the newest addition to Mitsubishi Electric's J-Series T-PMs mainly for electric and hybrid vehicle motor drive applications. The new module is expected to contribute to further compactness, weight reduction and reduced power consumption in inverters for electric and hybrid vehicles..

Sale Schedule

Series	Model	Ratings	Configuration	Sample Shipment
J-Series T-PM	CT300DJG060	300A/650V	2-in-1	Feb. 19, 2015

Product Features

1)	Reduced inverter size and weight achieved through the extra compact package with high integration - The compact power semiconductor module features a highly integrated sixth-generation IGBT with a carrier-stored trench-gate bipolar transistor (CSTBTTM) structure and high-thermal conductivity isolation sheet in a transfer molded package*. - Realizes compact EV/HEV inverter designs by achieving 36% smaller footprint and 42% lighter weight compared with the existing J-Series CT300DJH060 automotive power semiconductor module. * Pressure molding method for pouring heated and pressurized resin into an enclosed metal mold. It enables manufacturers to make multiple molds simultaneously for the production of highly reliable power semiconductor modules.
2)	Inverter power-loss reduction supported by low-loss power semiconductor chips - Realizes low power-loss EV/HEV inverter designs through the utilization of sixth-generation IGBT achieving 12% lower collector-emitter saturation voltage compared with the existing J-Series CT300DJH060.
3)	Automotive-grade high quality - Features transfer molded structure and Mitsubishi Electric's original direct lead bonding (DLB) structure. - Power-cycle and temperature-cycle life spans are 30 times longer than those of typical industrial power semiconductor modules. The power-cycle lifespan is based on repetitive operational tests with the chip energized and the temperature rapidly changed within a range of 50℃ and 100℃. The temperature cycle lifespan is based on repetitive operational tests with the temperature modulated between -40℃ and 125℃ without the chip being energized. - DLB structure reduces wiring resistance and inductance. - Traceability system enables management of materials and components, as well as the entire production process for each unit. - Completely lead-free, including the terminal plating.