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FOR IMMEDIATE RELEASE No.2884

Mitsubishi Electric to Launch Large Hybrid SiC DIPIPM for PV Application

More efficient power modules for PV power conditioner applications

TOKYO, November 20, 2014-Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its large hybrid SiC transfer-mold dual in-line package intelligent power module (DIPIPMTM), which incorporates a SiC Schottky barrier diode and seventh-generation IGBT chips featuring the carrier-stored trench-gate bipolar transistor (CSTBTTM) structure. The new module, which reduces the power consumption and size of PV inverter applications, will begin selling on November 28.

Large hybrid SiC DIPIPM (PSH50YA2A6)
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Large hybrid SiC DIPIPM (PSH50YA2A6)

Product Features
1) Reduces power consumption of PV inverter systems
-Hybrid structure achieved with SiC Schottky barrier diode and seventh-generation IGBT chips
-Reduces power loss by about 25% compared with Mitsubishi Electric's existing PV product (PS61A99).
2) Helps downsize PV inverter system thanks to modified short-circuit protection scheme
-The IGBT chip has a current-sensing pin that could detect a couple of thousands of the main collector currentand can be used for external short-circuit protection function.
-Current-sensing pin eliminates the need for a large external shunt resistor, which helps downsize power conditioner inverter systems
Sales Schedule
Series Model Specification Shipment
Large Hybrid SiC DIPIPM
for PV applications		 PSH50YA2A6 50A/600V Nov. 28, 2014

Inquiry

Media Contact
Public Relations Division
Mitsubishi Electric Corporation
Customer Inquiries
Power Device Overseas Marketing Dept.A and Dept.B
Mitsubishi Electric Corporation
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